MMDT5451 multi-chip general purpose transistor (pnp and npn) features power dissipation p cm: 200 mw (tamb=25 ) collector current i cm: 200 ma collector-base voltage v (br)cbo : 180/-160 v operating and storage junction temperature range t j , t stg : -55 to +150 tr2(npn 5551) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=10 0 a, i e =0 180 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 160 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb =12 0 v, i e =0 50 na emitter cut-off current i ebo v eb =4v, i c =0 50 na dc current gain h fe v ce =5v, i c = 1 ma v ce =5v, i c = 10 ma v ce =5v, i c =50ma 80 80 30 250 collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma 0.15 0.2 v emitter-base saturation voltage v be(sat) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma 1 v transition frequency f t v ce = 10 v, i c =10ma, f=100mhz 100 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 6 pf noise figure nf v ce = 5 v, i c =0.2ma, f=1khz 8 db so t -363 tr1 tr2 making: knm MMDT5451 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
tr1(pnp 5401) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=- 100 a, i e =0 -160 v collector-emitter breakdown voltage v (br)ceo ic=- 1 ma, i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e =-1 0 a, i c =0 -5 v collector cut-off current i cbo v cb =-12 0 v, i e =0 -50 na emitter cut-off current i ebo v eb =-3v, i c =0 -50 na dc current gain h fe v ce =-5v, i c =- 1 ma v ce =-5v, i c =- 10 ma v ce =-5v, i c =- 50 ma 50 60 50 240 collector-emitter saturation voltage v ce(sat) i c =- 10 ma, i b =- 1 ma i c =- 50 ma, i b =- 5 ma -0.2 -0.5 v emitter-base saturation voltage v be(sat) i c =- 10 ma, i b =- 1 ma i c =- 50 ma, i b =- 5 ma -1 v transition frequency f t v ce =- 10 v, i c =-10ma, f=100mhz 100 mhz collector output capacitance c ob v cb =- 10 v, i e =0, f= 1 mhz 6 pf noise figure nf v ce =- 5 v, i c =-0.2ma, f=1khz 8 db MMDT5451 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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